双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

CCPAK GaN FETs (SMD)

CCPAK GaN FETs (SMD)
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Top-side and bottom-side cooling

For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling and traditional bottom-side cooling package designs.

The first in the portfolio of GaN SMD packages, the CCPAK1212 and CCPAK1212i have a compact footprint of only 12 x 12 mm and a low package height of 2.5 mm.

image image

CCPAK GaN FETs videos

Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

CCPAK and next generation HV power GaN technology

主要特性和优势

Features and benefits

  • Copper-clip
    • 3 times lower inductances than industry-standard packages for lower switching losses and EMI
    • Higher reliability compared to wire-bond solution
  • Thermal performance
    • Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling
    • 175 °C Tj max
  • Manufacturability and robustness
    • Flexible leads for temperature cycling reliability
    • Flexible gull winged leads for robust board level reliability
    • Compatible with SMD soldering and AOI
  • Two cooling options
    • Bottom-side cooling (CCPAK1212)
    • Top-side cooling (CCPAK1212i)
  • Plan for Qualifications
    • AEC-Q101
    • MSL1
    • Halogen free

关键应用

Applications

  • Automotive EV
    • On board charging
    • DC-to-DC converters
    • Traction inverters
  • Industrial
    • Telecom and server Titanium grade power supplies
    • Industrial vehicle charging
    • Solar (PV) inverter
    • AC servo drive / Frequency inverters
    • Battery storage/UPS inverters

Parametric search

CCPAK GaN FETs (SMD)
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Products

GaN FETs

型号 描述 状态 快速访问
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Production
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production

Documentation

文件名称 标题 类型 日期
AN90004.pdf Probing considerations for fast switching applications Application note 2019-11-15
AN90006.pdf Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
RS3138_SOT8005_Combi_2_scr.jpg CCPAK1212i (SOT8005) package image Marcom graphics 2020-05-26
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2020-06-08
TN90004.pdf An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2020-11-05
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
vp_CCPAK_GaN_FETs.zip CCPAK GaN FETs (SMD) Value proposition 2022-01-27
AN90030.pdf Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10
nexperia_document_leaflet_GaN_CCPAK_2023.pdf CCPAK GaN FETs Leaflet 2023-10-25
nexperia_document_leaflet_GaN_CCPAK_2023_CHN.pdf CCPAK GaN FETs Chinese Leaflet 2023-10-25
AN90053.pdf Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs Application note 2024-05-31
nexperia_document_leaflet_GaNFETs_2024.pdf Power GaN FETs Leaflet 2024-07-24
nexperia_document_leaflet_GaNFETs_2024-CHN.pdf Power GaN FETs Chinese Leaflet 2024-07-31

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