双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

SOT1220-2

SOT1220-2

plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm

外形图

封装版本 封装名称 封装说明 参考 发行日期
SOT1220-2 DFN2020M-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm 2020-04-01

相关文档

文件名称 标题 类型 日期
SOT1220-2 3D model for products with SOT1220-2 package Design support 2023-02-02
SOT1220-2 plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm Package information 2020-06-17
SOT1220-2_115 DFN2020M-6; Reel pack for SMD, 7''; Q2/T3 product orientation Packing information 2021-06-10
SOT1220-2_125 DFN2020M-6; Reel pack for SMD, 7''; Q3/T4 product orientation Packing information 2023-04-25

采用此封装的产品

MOSFETs

型号 描述 快速访问
PMPB07R3VP 12 V, P-channel Trench MOSFET
PMPB09R5VP 12 V, P-channel Trench MOSFET
PMPB11R2VP 12 V, P-channel Trench MOSFET
PMPB12R7EP 30 V, P-channel Trench MOSFET
PMPB08R5XN 30 V, N-channel Trench MOSFET
PMPB08R6EN 30 V, N-channel Trench MOSFET
PMPB08R4VP 12 V, P-channel Trench MOSFET
PMPB14R7EP 30 V, P-channel Trench MOSFET
PMPB07R3EN 30 V, N-channel Trench MOSFET
PMPB07R0UN 20 V, N-channel Trench MOSFET
PMPB12R5UPE 20 V, P-channel Trench MOSFET
PMPB17EP 30 V, P-channel Trench MOSFET
PSMN047-100NSE N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement
PSMN071-100NSE N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement
PMPB14R8XN 30 V, N-channel Trench MOSFET
PMPB16R5XNE 30 V, N-channel Trench MOSFET
PMPB19R0UPE 20 V, P-channel Trench MOSFET
PMPB10R3XN 30 V, N-channel Trench MOSFET
PMPB50XN 110 V, N-channel Trench MOSFET
PMPB09R1XN 30 V, N-channel Trench MOSFET