可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74ALVC00BQ-Q100 | 74ALVC00BQ-Q100X | 935303988115 | SOT762-1 | 订单产品 |
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Click here for more informationQuad 2-input NAND gate
The 74ALVC00-Q100 is a quad 2-input NAND gate.
Schmitt trigger action on all inputs makes the device tolerant of slow rise and fall times.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 1.65 V to 3.6 V
CMOS low power dissipation
Overvoltage tolerant inputs to 3.6 V
Direct interface with TTL levels
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 250 mA per JESD78 Class II.A
Complies with JEDEC standards:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
型号 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|
74ALVC00BQ-Q100 | 1.65 - 3.6 | TTL | ± 24 | 2.1 | 145 | 4 | low | -40~85 | DHVQFN14 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74ALVC00BQ-Q100 | 74ALVC00BQ-Q100X (935303988115) |
Active | AV00 |
DHVQFN14 (SOT762-1) |
SOT762-1 | SOT762-1_115 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74ALVC00_Q100 | Quad 2-input NAND gate | Data sheet | 2024-01-11 |
SOT762-1 | 3D model for products with SOT762-1 package | Design support | 2019-10-03 |
alvc00 | alvc00 IBIS model | IBIS model | 2013-04-08 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DHVQFN14_SOT762-1_mk | plastic, dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; 0.5 mm pitch; 2.5 mm x 3 mm x 0.85 mm body | Marcom graphics | 2017-01-28 |
SOT762-1 | plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 14 terminals; 0.5 mm pitch; 2.5 x 3 x 1 mm body | Package information | 2023-04-05 |
SOT762-1_115 | DHVQFN14; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2020-04-21 |
74ALVC00BQ-Q100_Nexperia_Product_Reliability | 74ALVC00BQ-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74ALVC00BQ-Q100 | 74ALVC00BQ-Q100X | 935303988115 | Active | SOT762-1_115 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.