可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74ALVCH16646DGG | 74ALVCH16646DGG:11 | 935262421118 | SOT364-1 | 订单产品 |
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Click here for more information16-bit bus transceiver/register; 3-state
The 74ALVCH16646 consists of 16 non-inverting bus transceiver circuits with 3-state outputs, D-type flip-flops and control circuitry arranged for multiplexed transmission of data directly from the internal registers. Data on the ‘A’ or ‘B’ bus will be clocked in the internal registers, as the appropriate clock (nCPAB or nCPBA) goes to a HIGH logic level. Output enable (nOE) and direction (nDIR) inputs are provided to control the transceiver function. In the transceiver mode, data present at the high-impedance port may be stored in either the ‘A’ or ‘B’ register, or in both. The select source inputs (nSAB and nSBA) can multiplex stored and real-time (transparent mode) data. The direction (nDIR) input determines which bus will receive data when nOE is active (LOW). In the isolation mode (nOE = HIGH), ‘A’ data may be stored in the ‘B’ register and/or ‘B’ data may be stored in the ‘A’ register.
When an output function is disabled, the input function is still enabled and may be used to store and transmit data. Only one of the two buses, ‘A’ or ‘B’ may be driven at a time.
To ensure the high impedance state during power up or power down, nOE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.
Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level.
Wide supply voltage range of 2.3 V to 3.6 V
CMOS low power consumption
MULTIBYTE™ flow-through standard pin-out architecture
Low inductance multiple VCC and GND pins for minimize noise and ground bounce
Bushold on all data inputs
Current drive ±24 mA at VCC = 3.0 V.
Direct interface with TTL levels
Output drive capability 50 Ω transmission lines at 85 °C
Complies with JEDEC standards:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C/JESD36 (2.7 V to 3.6 V)
ESD protection:
Specified from -40 °C to +85 °C
型号 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|---|
74ALVCH16646DGG | n.a. | n.a. | TTL | ± 24 | 2.6 | 16 | 150 | low | -40~85 | TSSOP56 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74ALVCH16646DGG | 74ALVCH16646DGG:11 (935262421118) |
Active | ALVCH16646 |
TSSOP56 (SOT364-1) |
SOT364-1 |
SSOP-TSSOP-VSO-WAVE
|
SOT364-1_118 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74ALVCH16646 | 16-bit bus transceiver/register; 3-state | Data sheet | 2024-07-05 |
SOT364-1 | 3D model for products with SOT364-1 package | Design support | 2020-01-22 |
alvch16646 | alvch16646 IBIS model | IBIS model | 2013-04-08 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT364-1 | plastic, thin shrink small outline package; 56 leads; 0.5 mm pitch; 14 mm x 6.1 mm x 1.2 mm body | Package information | 2022-06-23 |
SOT364-1_118 | TSSOP56; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2020-04-21 |
74ALVCH16646DGG_Nexperia_Product_Reliability | 74ALVCH16646DGG Nexperia Product Reliability | Quality document | 2024-06-16 |
SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
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文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
alvch16646 | alvch16646 IBIS model | IBIS model | 2013-04-08 |
SOT364-1 | 3D model for products with SOT364-1 package | Design support | 2020-01-22 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74ALVCH16646DGG | 74ALVCH16646DGG:11 | 935262421118 | Active | SOT364-1_118 | 2,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.