可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74AUP1G126GN | 74AUP1G126GN,132 | 935291723132 | SOT1115 | 订单产品 |
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Click here for more informationLow-power buffer/line driver; 3-state
The 74AUP1G126 provides a single non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A LOW level at pin OE causes the output to assume a high-impedance OFF-state. This device has the input-disable feature, which allows floating input signals. The inputs are disabled when the output enable input OE is LOW.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
Input-disable feature allows floating input conditions
IOFF circuitry provides partial power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型号 | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
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74AUP1G126GN | 0.8 - 3.6 | CMOS | ± 1.9 | 70 | 1 | ultra low | -40~125 | XSON6 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
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74AUP1G126GN | 74AUP1G126GN,132 (935291723132) |
Active | pN |
XSON6 (SOT1115) |
SOT1115 |
REFLOW_BG-BD-1
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SOT1115_132 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AUP1G126 | Low-power buffer/line driver; 3-state | Data sheet | 2023-07-14 |
AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1115 | 3D model for products with SOT1115 package | Design support | 2023-02-02 |
aup1g126 | 74AUP1G126 IBIS model | IBIS model | 2014-12-14 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
XSON6_SOT1115_mk | plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 0.9 mm x 1 mm x 0.35 mm body | Marcom graphics | 2017-01-28 |
SOT1115 | plastic, leadless extremely thin small outline package; 6 terminals; 0.3 mm pitch; 0.9 mm x 1 mm x 0.35 mm body | Package information | 2022-05-27 |
SOT1115_132 | XSON6; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
74AUP1G126GN_Nexperia_Product_Reliability | 74AUP1G126GN Nexperia Product Reliability | Quality document | 2024-06-16 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
MAR_SOT1115 | MAR_SOT1115 Topmark | Top marking | 2013-06-03 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
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74AUP1G126GN | 74AUP1G126GN,132 | 935291723132 | Active | SOT1115_132 | 5,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.