双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AUP1G80GX

Low-power D-type flip-flop; positive-edge trigger

The 74AUP1G80 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and its complement will appear at the Q output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Power dissipation considerations Tamb (°C) Package name
74AUP1G80GX 0.8 - 3.6 CMOS ± 1.9 9.1 400 ultra low -40~125 X2SON5

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AUP1G80GX 74AUP1G80GX,125
(935298366125)		 Active pT SOT1226-3
X2SON5
(SOT1226-3) 		SOT1226-3 SOT1226-3_125

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AUP1G80GX 74AUP1G80GX,125 74AUP1G80GX rohs rhf rhf
品质及可靠性免责声明

Series

文档 (8)

文件名称 标题 类型 日期
74AUP1G80 Low-power D-type flip-flop; positive-edge trigger Data sheet 2023-07-24
SOT1226-3 3D model for products with SOT1226-3 package Design support 2021-01-28
aup1g80 74AUP1G80 IBIS model IBIS model 2014-12-14
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_document_leaflet_Logic_X2SON_packages_062018 X2SON ultra-small 4, 5, 6 & 8-pin leadless packages Leaflet 2018-06-05
SOT1226-3 plastic thermal enhanced extremely thin small outline package; no leads;5 terminals; body 0.8 x 0.8 x 0.32 mm Package information 2020-08-27
SOT1226-3_125 X2SON5; Reel pack for SMD, 7''; Q3/T4 product orientation Packing information 2020-05-08
74AUP1G80GX_Nexperia_Product_Reliability 74AUP1G80GX Nexperia Product Reliability Quality document 2024-06-16

支持

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模型

文件名称 标题 类型 日期
aup1g80 74AUP1G80 IBIS model IBIS model 2014-12-14
SOT1226-3 3D model for products with SOT1226-3 package Design support 2021-01-28

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
74AUP1G80GX 74AUP1G80GX,125 935298366125 Active SOT1226-3_125 10,000 订单产品

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
74AUP1G80GX 74AUP1G80GX,125 935298366125 SOT1226-3 订单产品