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Click here for more information74AUP3G34GF
Low-power triple buffer
The 74AUP3G34 is a triple buffer.
Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78B Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74AUP3G34GF | 74AUP3G34GFX (935305158115) |
Obsolete | no package information |
Series
文档 (3)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AUP3G34 | Low-power triple buffer | Data sheet | 2024-04-29 |
aup3g34 | 74AUP3G34 IBIS Model | IBIS model | 2014-12-05 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
支持
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模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
aup3g34 | 74AUP3G34 IBIS Model | IBIS model | 2014-12-05 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.