可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
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74AVC4T245BZ | 74AVC4T245BZX | 935691143115 | SOT8016-1 | 订单产品 |
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Click here for more information4-bit dual supply translating transceiver with configurable voltage translation; 3-state
The 74AVC4T245 is an 4-bit, dual supply transceiver that enables bidirectional level translation. The device can be used as two 2-bit transceivers or as a 4-bit transceiver. It features four 2-bit input-output ports (nAn and nBn), a direction control input (nDIR), an output enable input (nOE) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nAn, nOE and nDIR are referenced to VCC(A) and pins nBn are referenced to VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows transmission from nBn to nAn. The output enable input (nOE) can be used to disable the outputs so the buses are effectively isolated.
The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both nAn and nBn are in the high-impedance OFF-state.
Wide supply voltage range:
VCC(A): 0.8 V to 3.6 V
VCC(B): 0.8 V to 3.6 V
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Maximum data rates:
380 Mbit/s (≥ 1.8 V to 3.3 V translation)
200 Mbit/s (≥ 1.1 V to 3.3 V translation)
200 Mbit/s (≥ 1.1 V to 2.5 V translation)
200 Mbit/s (≥ 1.1 V to 1.8 V translation)
150 Mbit/s (≥ 1.1 V to 1.5 V translation)
100 Mbit/s (≥ 1.1 V to 1.2 V translation)
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型号 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name | Category |
---|---|---|---|---|---|---|---|---|---|---|
74AVC4T245BZ | 0.8 - 3.6 | 0.8 - 3.6 | CMOS/LVTTL | ± 12 | 2.1 | 4 | very low | -40~125 | DHXQFN16 | Bi-directional | Direction controlled |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74AVC4T245BZ | 74AVC4T245BZX (935691143115) |
Active | T245 |
DHXQFN16 (SOT8016-1) |
SOT8016-1 | SOT8016-1_115 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AVC4T245 | 4-bit dual supply translating transceiver with configurable voltage translation; 3-state | Data sheet | 2024-04-11 |
AN90007 | Pin FMEA for AVC family | Application note | 2018-11-30 |
Nexperia_document_guide_Logic_translators | Nexperia Logic Translators | Brochure | 2021-04-12 |
SOT8016-1 | 3D model for products with SOT8016-1 package | Design support | 2023-02-07 |
avc4t245 | 74AVC4T245 IBIS model | IBIS model | 2020-11-23 |
SOT8016-1 | plastic, leadless dual in-line compatible thermal enhanced extreme thin quad flat package;no leads; 16 terminals; 0.4 mm pitch; body 2 mm x 2.4 mm x 0.48 mm | Package information | 2023-02-03 |
SOT8016-1_115 | DHXQFN16; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-12-03 |
74AVC4T245BZ_Nexperia_Product_Reliability | 74AVC4T245BZ Nexperia Product Reliability | Quality document | 2024-06-16 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74AVC4T245BZ | 74AVC4T245BZX | 935691143115 | Active | SOT8016-1_115 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.