双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AXP1G00GS

Low-power 2-input NAND gate

The 74AXP1G00 is a single 2-input NAND gate.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此产品已停产

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.5 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

    • CDM JESD22-C101E exceeds 1000 V

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Multiple package options

  • Specified from -40 °C to +85 °C

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AXP1G00GS 0.7 - 2.75 CMOS ± 4.5 2.7 70 1 ultra low -40~85 XSON6

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AXP1G00GS 74AXP1G00GSH
(935304079125)		 Withdrawn / End-of-life rA SOT1202
XSON6
(SOT1202) 		SOT1202 REFLOW_BG-BD-1
暂无信息

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AXP1G00GS 74AXP1G00GSH 74AXP1G00GS rohs rhf rhf
品质及可靠性免责声明

Series

文档 (10)

文件名称 标题 类型 日期
74AXP1G00 Low-power 2-input NAND gate Data sheet 2021-07-06
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT1202 3D model for products with SOT1202 package Design support 2023-02-02
axp1g00 74AXP1G00 IBIS model IBIS model 2014-10-22
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT1202 plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1mm x 0.35 mm body Package information 2022-06-01
74AXP1G00GS_Nexperia_Product_Reliability 74AXP1G00GS Nexperia Product Reliability Quality document 2022-05-04
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT1202 MAR_SOT1202 Topmark Top marking 2013-06-03

支持

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模型

文件名称 标题 类型 日期
axp1g00 74AXP1G00 IBIS model IBIS model 2014-10-22
SOT1202 3D model for products with SOT1202 package Design support 2023-02-02

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册