双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HC3G14GD

Triple inverting Schmitt trigger

The 74HC3G14; 74HCT3G14 is a triple inverter with Schmitt-trigger inputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. Schmitt trigger inputs transform slowly changing input signals into sharply defined jitter-free output signals.

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Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • Input levels:

    • For 74HC3G14: CMOS level

    • For 74HCT3G14: TTL level

  • CMOS low power dissipation

  • High noise immunity

  • Unlimited input rise and fall times

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Applications

  • Wave and pulse shaper for highly noisy environments

  • Astable multivibrators

  • Monostable multivibrators

参数类型

型号 Package name
74HC3G14GD XSON8

文档 (4)

文件名称 标题 类型 日期
74HC_HCT3G14 Triple inverting Schmitt trigger Data sheet 2023-12-18
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

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模型

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.