双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC1G58GF

Low-power configurable multiple function gate

The 74LVC1G58 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter and buffer; using the 3-bit input. All inputs can be connected diectly to VCC or GND. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此产品已停产

Alternatives

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power dissipation

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Overvoltage tolerant inputs to 5.5 V

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC1G58GF 74LVC1G58GF,132
(935282424132)		 Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC1G58GF 74LVC1G58GF,132 74LVC1G58GF rohs rhf rhf
品质及可靠性免责声明

Series

文档 (4)

文件名称 标题 类型 日期
74LVC1G58 Low-power configurable multiple function gate Data sheet 2023-08-18
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
lvc1g58 74LVC1G58 IBIS model IBIS model 2014-10-20

支持

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模型

文件名称 标题 类型 日期
lvc1g58 74LVC1G58 IBIS model IBIS model 2014-10-20

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册