可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74LVC8T595PW | 74LVC8T595PWJ | 935309144118 | SOT360-1 | 订单产品 |
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Click here for more informationDual supply 8-bit serial-in/serial-out or parallel-out shift register; 3-state
The 74LVC8T595 is an 8-bit serial-in/serial or parallel-out shift register with a storage register and 3-state outputs. Both the shift and storage register have separate clocks. Data is shifted on the positive-going transitions of the SHCP input. The data in the shift register is transferred to the storage register on a positive-going transition of the STCP input. If both clocks are connected together, the shift register is always one clock pulse ahead of the storage register.
VCC(A) and VCC(B) can be supplied at any voltage between 1.1 V and 5.5 V making the device suitable for translating between any of the voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins MR, SHCP, STCP, OE, DS and Q7S are referenced to VCC(A) and pins Qn are referenced to VCC(B).
The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when VCC(A) is at GND level, the Qn outputs are in the high-impedance OFF-state.
Wide supply voltage range:
VCC(A): 1.1 V to 5.5 V
VCC(B): 1.1 V to 5.5 V
High noise immunity
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
±24 mA output drive (VCC(A) = VCC(B) = 3.0 V)
Inputs accept voltages up to 5.5 V
IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standards:
JESD8-12A (1.1 V to 1.3 V)
JESD8-11A (1.4 V to 1.6 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (3.0 V to 3.6 V)
JESD12-6 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 4000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型号 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name | Category |
---|---|---|---|---|---|---|---|---|---|---|
74LVC8T595PW | 1.1 - 5.5 | 1.1 - 5.5 | CMOS/LVTTL | ± 24 | 4.1 | 8 | low | -40~125 | TSSOP20 | Uni-directional |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74LVC8T595PW | 74LVC8T595PWJ (935309144118) |
Active | VC8T595 |
TSSOP20 (SOT360-1) |
SOT360-1 |
SSOP-TSSOP-VSO-WAVE
|
SOT360-1_118 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74LVC8T595 | Dual supply 8-bit serial-in/serial-out or parallel-out shift register; 3-state | Data sheet | 2023-08-29 |
Nexperia_document_guide_Logic_translators | Nexperia Logic Translators | Brochure | 2021-04-12 |
SOT360-1 | 3D model for products with SOT360-1 package | Design support | 2020-01-22 |
lvc8t595 | lvc8t595 IBIS model | IBIS model | 2017-06-02 |
Nexperia_document_leaflet_Logic_74LVC8T595_201711 | Voltage-translating Shift Register for Modular Designs | Leaflet | 2017-11-29 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP20_SOT360-1_mk | plastic, thin shrink small outline package; 20 leads; 0.65 mm pitch; 6.5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
SOT360-1 | plastic, thin shrink small outline package; 20 leads; 0.65 mm pitch; 6.5 mm x 4.4 mm x 1.2 mm body | Package information | 2024-11-15 |
SOT360-1_118 | TSSOP20; Reel pack for SMD, 13''; Q1/T1 product orientation | Packing information | 2023-08-30 |
74LVC8T595PW_Nexperia_Product_Reliability | 74LVC8T595PW Nexperia Product Reliability | Quality document | 2024-06-16 |
SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
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74LVC8T595PW | 74LVC8T595PWJ | 935309144118 | Active | SOT360-1_118 | 2,500 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.