双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BC869-16-Q

20 V, 2 A PNP medium power transistors

PNP medium power transistor in a SOT89 (SC-62) medium power and flat lead plastic package.

Features and benefits

  • High current

  • Three current gain selections

  • High power dissipation capability

  • Exposed heatsink for excellent thermal and electrical conductivity

  • Leadless very small SMD plastic package with medium power capability

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Linear voltage regulators

  • High-side switches

  • Battery-driven devices

  • Power management

  • MOSFET drivers

  • Amplifiers

文档 (1)

文件名称 标题 类型 日期
BC869-Q_SER 20 V, 2 A PNP medium power transistors Data sheet 2024-12-11

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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.