双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BST82

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

不建议用在新设计中(NRND)。

Features and benefits

  • Saves PCB space due to small footprint

  • Suitable for high frequency applications due to fast switching characteristics

  • Suitable for logic level gate drive sources

Applications

  • High-speed line drivers

  • Logic level translators

  • Relay drivers

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 5 V (mΩ) Tj [max] (°C) ID [max] (A) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BST82
SOT23 SOT23 Not for design in N 1 100 20 10 150 0.19 0.83 30 2 N 25 8.5 2011-01-24

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
BST82
BST82,215
(933733110215)		 Active O2% SOT23
(SOT23) 		SOT23 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT23_215
BST82,235
(933733110235)		 Active O2% SOT23_235

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BST82
BST82,215 BST82 rohs rhf rhf
BST82
BST82,235 BST82 rohs rhf rhf
品质及可靠性免责声明

文档 (19)

文件名称 标题 类型 日期
BST82 N-channel enhancement mode field-effect transistor Data sheet 2000-07-25
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT23 3D model for products with SOT23 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT23_mk plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28
SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Package information 2022-10-12
SOT23_215 Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2020-04-29
SOT23_235 Reel pack for SMD, 11"; Q3/T4 product orientation Packing information 2020-06-01
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BST82_8_20_2010 BST82 Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
BST82_8_20_2010 BST82 Spice model SPICE model 2013-12-13
SOT23 3D model for products with SOT23 package Design support 2019-01-22

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
BST82 BST82,215 933733110215 Active SOT23_215 3,000 订单产品
BST82 BST82,235 933733110235 Active SOT23_235 10,000 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
BST82 BST82,215 933733110215 SOT23 订单产品
BST82 BST82,235 933733110235 SOT23 订单产品