双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BUK7510-100B

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

此产品已停产

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Q101 compliant
  • Suitable for standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V, 24 V and 42 V loads
  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK7510-100B SOT78A TO-220AB End of life N 1 100 10 175 110 22 80 300 212 3 Y 5080 677 2010-09-02

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
BUK7510-100B BUK7510-100B,127
(934057110127)		 Obsolete BUK7510 100B P**XXYY AZ Batch No. SOT78A
TO-220AB
(SOT78A) 		SOT78A 暂无信息

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BUK7510-100B BUK7510-100B,127 BUK7510-100B rohs rhf rhf
品质及可靠性免责声明

Series

文档 (15)

文件名称 标题 类型 日期
BUK7510-100B N-channel TrenchMOS standard level FET Data sheet 2012-01-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78A plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.5 mm x 10 mm x 4.3 mm body Package information 2020-04-21
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册