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Click here for more informationCBT3384D
10-bit bus switch with 5-bit output enables
The CBT3384 is a dual 5-pole, single-throw bus switch. The device features two output enable inputs (nOE) that each control five switch channels. The switches are disabled when the associated nOE input is HIGH. This device is fully specified for partial power down applications using IOFF.
Features and benefits
5 Ω switch connection between two ports
Direct interface with TTL levels
Overvoltage tolerant control inputs to 5.5 V
IOFF circuitry provides partial Power-down mode operation
Latch-up protection exceeds 100 mA per JESD78
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C
参数类型
型号 | VCC (V) | VPASS (V) | Logic switching levels | RON (Ω) | f(-3dB) (MHz) | Nr of bits | tpd (ns) | Power dissipation considerations | Tamb (°C) |
---|---|---|---|---|---|---|---|---|---|
CBT3384D | 4.5 - 5.5 | 3.9 | TTL | 7 | 300 | 10 | 0.25 | very low | -40~85 |
PCB Symbol, Footprint and 3D Model
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封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
CBT3384D | CBT3384D,112 (935269089112) |
Obsolete | no package information | ||||
CBT3384D,118 (935269089118) |
Obsolete |
Series
文档 (3)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
CBT3384 | 10-bit bus switch with 5-bit output enables | Data sheet | 2024-06-25 |
AN90010 | Pin FMEA for CBT(D) family | Application note | 2019-10-28 |
CBT3384D_Nexperia_Product_Reliability | CBT3384D Nexperia Product Reliability | Quality document | 2022-05-04 |
支持
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模型
No documents available
PCB Symbol, Footprint and 3D Model
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.