双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

GAN041-650WSB

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features and benefits

  • Ultra-low reverse recovery charge

  • Simple gate drive (0 V to +10 V or 12 V)

  • Robust gate oxide (±20 V capability)

  • High gate threshold voltage (+4 V) for very good gate bounce immunity

  • Very low source-drain voltage in reverse conduction mode

  • Transient over-voltage capability

Applications

  • Hard and soft switching converters for industrial and datacom power

  • Bridgeless totempole PFC

  • PV and UPS inverters

  • Servo motor drives

参数类型

型号 Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
GAN041-650WSB SOT429-3 TO-247-3L Production cascode N 1 650 41 175 47.2 6.6 22 187 150 3.9 N 1500 147 2020-05-14

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
GAN041-650WSB GAN041-650WSBQ
(934661752127)
Active GAN041 650WSB SOT429-3
TO-247-3L
(SOT429-3)
SOT429-3 暂无信息

Boards

Part number Description Type Quick links Shop link
描述
The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
类型
Evaluation board
Quick links
Shop link

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
GAN041-650WSB GAN041-650WSBQ GAN041-650WSB rohs rhf rhf
品质及可靠性免责声明

文档 (18)

文件名称 标题 类型 日期
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Data sheet 2024-06-04
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90030_translated ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19
SOT429-3 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2023-12-07
GAN041_650WSB GAN041-650WSB SPICE model SPICE model 2021-03-24
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
GaN041-650WSB GaN041-650WSB Foster thermal model Thermal model 2021-03-25
GaN041-650WSB_RC_Thermal_Model GaN041-650WSB RC thermal model Thermal model 2021-03-25
GaN041-650WSB_cauer GaN041-650WSB Cauer thermal model Thermal model 2021-03-25
UM90010 NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB User manual 2023-10-23
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
GAN041_650WSB GAN041-650WSB SPICE model SPICE model 2021-03-24
GaN041-650WSB GaN041-650WSB Foster thermal model Thermal model 2021-03-25
GaN041-650WSB_RC_Thermal_Model GaN041-650WSB RC thermal model Thermal model 2021-03-25
GaN041-650WSB_cauer GaN041-650WSB Cauer thermal model Thermal model 2021-03-25

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
GAN041-650WSB GAN041-650WSBQ 934661752127 Active 暂无信息 300 订单产品

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
GAN041-650WSB GAN041-650WSBQ 934661752127 SOT429-3 订单产品