双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

HEF40098BT

Hex inverting buffer; 3-state

The HEF40098B is a hex inverting buffer with 3-state outputs. The 3-state outputs are controlled by two active LOW enable inputs (1OE and 2OE). A HIGH on 1OE causes four of the six active LOW buffer elements (1Y0 to 1Y3) to assume a high-impedance or OFF-state regardless of the other input conditions and a HIGH on 2OE causes the outputs of the remaining two buffer elements (2Y0 and 2Y1) to assume a high-impedance or OFF-state regardless of the other input conditions.

It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input.

此产品已停产

Features and benefits

  • Fully static operation

  • 5 V, 10 V, and 15 V parametric ratings

  • Standardized symmetrical output characteristics

  • Specified from -40 °C to +85 °C

  • Complies with JEDEC standard JESD 13-B

Applications

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
HEF40098BT HEF40098BT,652
(933373410652)		 Obsolete no package information
HEF40098BT,653
(933373410653)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
HEF40098BT HEF40098BT,652 HEF40098BT rohs rhf rhf
HEF40098BT HEF40098BT,653 HEF40098BT rohs rhf rhf
品质及可靠性免责声明

Series

文档 (2)

文件名称 标题 类型 日期
HEF40098B Hex inverting buffer: 3- state Data sheet 2017-03-17
AN11051 Pin FMEA HEF4000 family Application note 2019-01-09

支持

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模型

No documents available

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册