Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationIP4251CZ8-4-TTL
Integrated 4-, 6- and 8-channel passive filter network with ESD protection
The devices are 4-, 6- and 8-channel RC low-pass filter arrays which are designed to provide filtering of undesired RF signals on the I/O ports of portable communication or computing devices. In addition, the devices incorporate diodes to provide protection to downstream components from ElectroStatic Discharge (ESD) voltages as high as ±30 kV.
The devices are fabricated using monolithic silicon technology and integrate up to eight resistors and sixteen diodes in a 0.4 mm pitch 8-, 12- or 16-pin ultra-thin leadless Quad Flat No-leads (QFN) plastic package with a height of 0.55 mm only.
Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
4-, 6- and 8-channel integrated π-type RC filter network
ESD protection to ±30 kV contact discharge according to IEC 61000-4-2 far exceeding level 4
QFN plastic package with 0.4 mm pitch and 0.55 mm height
Applications
General-purpose ElectroMagnetic Interference (EMI) and Radio-Frequency Interference (RFI) filtering and downstream ESD protection for:
Cellular phone and Personal Communication System (PCS) mobile handsets
Cordless telephones
Wireless data (WAN/LAN) systems
Mobile Internet Devices (MID)
Portable Media Players (PMP)
文档 (1)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| IP4251_52_53_54-TTL | Integrated 4-, 6- and 8-channel passive filter network with ESD protection | Data sheet | 2017-06-02 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.