可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
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NEH2000BY | NEH2000BYJ | 935691544118 | SOT8076-1 | 订单产品 |
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Click here for more informationEnergy harvesting PMIC
NEH2000BY is a high-performance energy harvesting solution for low-power applications. The NEH2000BY harvests energy generated by a photo-voltaic (PV) cell. The energy charges a rechargeable battery.
Nexperia’s advanced Maximum Power Point Tracking (MPPT) uses an embedded hill-climbing algorithm to deliver the maximum power to the load. The MPPT is designed to be independent of specific characteristics of the harvesters, therefore any harvester that fits the specifications of the chip can be used. Moreover, the MPPT circuit can detect the maximum power point with an interval of 0.7 second resulting in maximum efficiency in various environments where energy can rapidly change over time.
The NEH2000BY is available in a Plastic 16 terminal Quad Flat package, 3 mm x 3 mm.
High-efficiency low-power DC-to-DC converter
Harvesting power range from 35 µW to 2 mW
Advanced MPPT to maximize efficiency
Ultra fast MPPT interval of 0.7 second
Small BOM with no external inductor required
Compatible with various types of rechargeable batteries
Wireless IoT devices
Smart remote controls
Electronic shelf labels
Wearable devices
Industrial and environmental monitoring
Consumer electronics
Beacons
型号 | Storage element voltage | Harvesting power range (mW) | Supported harvester | Supported storage element | Boosting Factor | Configurable | Package name |
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NEH2000BY | 2.5 to 4.5 | 0.035 to 2 | PV-cell | Lithium | 2 | No | HWQFN16 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
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NEH2000BY | NEH2000BYJ (935691544118) |
Active | NEH2000 |
HWQFN16 (SOT8076-1) |
SOT8076-1 | SOT8076-1_118 |
Part number | Description | Type | Quick links | Shop link |
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描述 The Nexperia NEVB-NEH2000BY-3V5 board allows convenient evaluation of the NEH2000BY energy harvesting PMIC. Designed to be simple and very compact, it is ideal to get started with energy harvesting. The small form factor enables easy integration into prototype applications.
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类型 Evaluation board
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Shop link
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描述 The Nexperia NEVB-NEH2000BY-4V2 board allows convenient evaluation of the NEH2000BY energy harvesting PMIC. Designed to be simple and very compact, it is ideal to get started with energy harvesting. The small form factor enables easy integration into prototype applications.
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类型 Evaluation board
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Quick links
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Shop link
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文件名称 | 标题 | 类型 | 日期 |
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NEH2000BY | Energy harvesting PMIC | Data sheet | 2023-08-16 |
AN90040 | Designing an Energy Harvesting system using the NEH2000BY PMIC | Application note | 2023-03-28 |
2023-0001_NEX_045_Energy_Harvesting_Solution_leaflet_CN-final | Nexperia_NEH2000BY_Energy_Harvesting_Solution_leaflet | Leaflet | 2024-01-05 |
Nexperia_NEH2000BY_Energy_Harvesting_Solution_leaflet | Maximize energy storage and sustainability in IoT and low power wireless devices with energy harvesting PMIC | Leaflet | 2023-04-04 |
User_Manual_UM90020_CN-final | User_Manual_UM90020_CN-final | Leaflet | 2024-01-05 |
SOT8076-1 | plastic thermal enhanced very very thin Quad Flat packages;no leads; 16 terminals; 0.5 mm pitch; 3.0 × 3.0 × 0.75 mm body | Package information | 2023-03-28 |
SOT8076-1_118 | HWQFN16; Reel pack for SMD; 13"; Q1/T1 product orientation | Packing information | 2023-04-03 |
UM90020 | NEH2000BY PMIC evaluation boards user guide | User manual | 2023-07-11 |
Nexperia_whitepaper_IoT_innovations | Combining technology innovations to make IoT implementations most-effective and sustainable | White paper | 2023-04-04 |
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No documents available
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
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NEH2000BY | NEH2000BYJ | 935691544118 | Active | SOT8076-1_118 | 5,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.