可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| NSF040120T2A1 | NSF040120T2A1J | 934668904118 | SOT8107-2 | 订单产品 |
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Click here for more informationNSF040120T2A1
1200 V, 40 mΩ, N-channel SiC MOSFET
The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Features and benefits
Excellent RDSon temperature stability
Very low switching losses
Fast reverse recovery
Fast switching speed
Temperature independent turn-off switching losses
Very fast and robust intrinsic body diode
Faster commutation and improved switching due to the additional Kelvin source pin
Applications
E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supply
Uninterruptable power supply
Motor drives
参数类型
| 型号 | Product status | Qualification | Drain-source breakdown voltage (V) | Drain-source on-state resistance at 15 V (mΩ) | Drain-source on-state resistance at 18 V (mΩ) | ID [max] (A) | Rth(j-c) [typ] (K/W) | Package name | QG(tot) [typ] (nC) | Tj [max] (°C) |
|---|---|---|---|---|---|---|---|---|---|---|
| NSF040120T2A1 | Production | Industrial | 1200 | 53 | 40 | 55 | 0.45 | X.PAK | 81 | 175 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| NSF040120T2A1 | NSF040120T2A1J (934668904118) |
Active | NSF040120T2A1 |
X.PAK (SOT8107-2) |
SOT8107-2 | 暂无信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 The evaluation board NEVB-NSF-XPAK-A consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation. The board is optimized for low inductance and features a high bandwidth current shunt that can be used to evaluate the switching performance with maximum precision.
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类型 Evaluation board
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Quick links
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Shop link
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文档 (3)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| NSF040120T2A1 | 1200 V, 40 mΩ, N-channel SiC MOSFET | Data sheet | 2025-03-14 |
| SOT8107-2 | Plastic, surface-mounted Top Side Cooling (TSC) Package;1.27 mm pitch; 14.0 mm x 11.8 mm x 3.5 mm body | Package information | 2025-03-17 |
| UM90031 | A guide to using Nexperia SiC MOSFET LTspice models | User manual | 2025-03-18 |
模型
No documents available
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| NSF040120T2A1 | NSF040120T2A1J | 934668904118 | Active | 暂无信息 | 800 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NSF040120T2A1
1200 V, 40 mΩ, N-channel SiC MOSFET
从安世半导体购买
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