双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NSF060120T2A0

1200 V, 60 mΩ, N-channel SiC MOSFET

The NSF060120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability

  • Very low switching losses

  • Fast reverse recovery

  • Fast switching speed

  • Temperature independent turn-off switching losses

  • Very fast and robust intrinsic body diode

  • Faster commutation and improved switching due to the additional Kelvin source pin

Applications

  • E-vehicle charging infrastructure

  • Photovoltaic inverters

  • Switch mode power supply

  • Uninterruptable power supply

  • Motor drives

参数类型

型号 Product status Qualification Drain-source breakdown voltage (V) Drain-source on-state resistance at 15 V (mΩ) Drain-source on-state resistance at 18 V (mΩ) ID [max] (A) Rth(j-c) [typ] (K/W) Package name QG(tot) [typ] (nC) Tj [max] (°C)
NSF060120T2A0 Production Industrial 1200 80 60 36 0.7 X.PAK 57 175

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NSF060120T2A0 NSF060120T2A0J
(934668905118)
Active NSF060120T2A0 SOT8107-2
X.PAK
(SOT8107-2)
SOT8107-2 暂无信息

Boards

Part number Description Type Quick links Shop link
描述
The evaluation board NEVB-NSF-XPAK-A consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation. The board is optimized for low inductance and features a high bandwidth current shunt that can be used to evaluate the switching performance with maximum precision.
类型
Evaluation board
Quick links
Shop link

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NSF060120T2A0 NSF060120T2A0J NSF060120T2A0 rohs rhf
品质及可靠性免责声明

文档 (4)

文件名称 标题 类型 日期
NSF060120T2A0 1200 V, 60 mΩ, N-channel SiC MOSFET Data sheet 2025-03-14
SOT8107-2 Plastic, surface-mounted Top Side Cooling (TSC) Package;1.27 mm pitch; 14.0 mm x 11.8 mm x 3.5 mm body Package information 2025-03-17
NSF060120T2A0_model_LTspice_V1_0 NSF060120T2A0 LTspice model SPICE model 2025-03-18
UM90031 A guide to using Nexperia SiC MOSFET LTspice models User manual 2025-03-18

模型

文件名称 标题 类型 日期
NSF060120T2A0_model_LTspice_V1_0 NSF060120T2A0 LTspice model SPICE model 2025-03-18

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
NSF060120T2A0 NSF060120T2A0J 934668905118 Active 暂无信息 800 订单产品

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
NSF060120T2A0 NSF060120T2A0J 934668905118 SOT8107-2 订单产品