可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| NXS0506GU-Q100 | NXS0506GU-Q100X | 935691498115 | SOT1161-1 | 订单产品 |
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Click here for more informationNXS0506GU-Q100
SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection
The NXS0506GU-Q100 is an SD 3.0-compatible bidirectional dual supply level translator with auto-direction control. It is designed to interface between a memory card operating at 1.7 V to 3.6 V signal levels and a host with a nominal supply voltage of 1.1 V to 1.95 V. The device supports SD 3.0: SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 High-Speed (50 MHz) and Default-Speed (25 MHz) modes. The device has a built-in EMI filter and robust ESD protection (IEC 61000-4-2, level 4).
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 2) and is suitable for use in automotive applications.
Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 2)
- Specified from -40 °C to +85 °C and from -40 °C to +105 °C
Supports up to 208 MHz clock rate
SD 3.0 specification-compatible voltage translation to support: SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes
1.1 V to 1.95 V host side interface voltage support
Auto-direction sensing
Low power consumption
Integrated pull-up resistors: no external resistors required
Integrated EMI filters suppress higher harmonics of digital I/Os
Level shifting buffers keep ESD stress away from the host (zero-clamping concept)
16-terminal XQFN16 package; pitch 0.4 mm
Latch-up performance exceeds 100 mA per JESD78 Class II.A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
- IEC61000-4-2, level 4, contact discharge on all memory card-side pins exceeds 8000 V
- IEC61000-4-2, level 4, air discharge on all memory card-side pins exceeds 15000 V
Applications
Smartphone
Mobile handsets
Digital cameras
Tablet PCs
Laptop computers
SD, MMC or microSD card readers
参数类型
| 型号 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
|---|---|---|---|---|---|---|---|---|---|
| NXS0506GU-Q100 | 1.1 - 1.95 | 1.7 - 3.6 | CMOS | ± 2 | 2.6 | 6 | low | -40~85 | XQFN16 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| NXS0506GU-Q100 | NXS0506GU-Q100X (935691498115) |
Active | m5 |
XQFN16 (SOT1161-1) |
SOT1161-1 | SOT1161-1_115 |
Series
文档 (9)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| NXS0506GU_Q100 | SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection | Data sheet | 2024-07-31 |
| AN90037 | NXS0506 SD-card voltage level translator | Application note | 2022-09-22 |
| SOT1161-1 | 3D model for products with SOT1161-1 package | Design support | 2023-02-07 |
| nxs0506 | NXS0506 IBIS model | IBIS model | 2021-12-21 |
| SD_card_NXS0506_leaflet | SD card NXS0506 LEaflet | Leaflet | 2024-06-28 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT1161-1 | plastic, leadless extermely thin quad flat package; 16 terminals; 0.4 mm pitch; 2.6 mm x 1.8 mm x 0.5 mm body | Package information | 2022-06-15 |
| SOT1161-1_115 | XQFN16; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-04-21 |
| NXS0506GU-Q100_Nexperia_Product_Reliability | NXS0506GU-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| NXS0506GU-Q100 | NXS0506GU-Q100X | 935691498115 | Active | SOT1161-1_115 | 4,000 | 订单产品 |
样品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NXS0506GU-Q100
SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection
从安世半导体购买
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