双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NXT4556AUR

SIM card interface level translator

The NXT4556AUR device is built for interfacing a SIM card with a single low-voltage host side interface. The NXT4556AUR has three level translators to convert the data, RST and CLK signals between a SIM card and a host microcontroller. A high speed level translation capable of supporting class-B, class-C SIM cards. VCC_SIM power-down initiates a shutdown sequence on SIM card pins in accordance with ISO-7816-3.

The NXT4556AUR is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface requirements.

Features and benefits

  • Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V

  • Host micro-controller operating voltage range: 1.08 V to 1.98 V

  • Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation

  • Incorporates shutdown feature for the SIM card signals according to ISO-7816-3

  • High Vdis(UVLO_AC) switching level, arranging quick shut down when VCC_SIM powers down

  • Integrated pull-up resistors; no external resistor required

  • Integrated EMI Filters suppresses higher harmonics of digital I/O's

  • Low current shutdown mode < 1 μA

  • Supports clock speed beyond 5 MHz clock

  • Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2 kV

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1 kV

    • IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins exceeds 8 kV and 15 kV

  • Fast activation at power up

  • Smooth IO signals at activation

Applications

  • NXT4556AUR can be used with a range of SIM card attached devices including:

    • Mobile and personal phones

    • Wireless modems

    • SIM card terminals

参数类型

型号 VCC(A) (V) VCC(B) (V) Logic switching levels Output drive capability (mA) tpd (ns) Nr of bits Power dissipation considerations Tamb (°C) Package name Category
NXT4556AUR 1.08 - 1.98 1.62 - 3.3 CMOS ± 1 20 3 low -40~85 WLCSP9 Application specific

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
NXT4556AUR NXT4556AURZ
(935691831336)		 Active z6 SOT8057-1
WLCSP9
(SOT8057-1) 		SOT8057-1 SOT8057-1_336

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NXT4556AUR NXT4556AURZ NXT4556AUR rohs rhf rhf
品质及可靠性免责声明

Series

文档 (5)

文件名称 标题 类型 日期
NXT4556AUR SIM card interface level translator Data sheet 2023-12-05
nxt4556aur NXT4556AUR IBIS model IBIS model 2023-12-05
SOT8057-1 wafer level chip-scale pakage; 9 bumps; 0.92 × 0.92 × 0.42 mm body Package information 2023-06-13
SOT8057-1_336 WLCSP9; Reel dry pack for SMD, 7"; Q1/T1 product orientation Packing information 2023-08-10
NXT4556AUR_Nexperia_Product_Reliability NXT4556AUR Nexperia Product Reliability Quality document 2024-06-16

支持

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模型

文件名称 标题 类型 日期
nxt4556aur NXT4556AUR IBIS model IBIS model 2023-12-05

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
NXT4556AUR NXT4556AURZ 935691831336 Active SOT8057-1_336 3,000 订单产品

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
NXT4556AUR NXT4556AURZ 935691831336 SOT8057-1 订单产品