双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PBLS4003V

40 V PNP BISS loadswitch

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package.

此产品已停产

Features and benefits

  • Low VCEsat (BISS) and resistor-equipped transistor in one package
  • Low threshold voltage (<1 V) compared to MOSFET
  • Low drive power required
  • Space-saving solution
  • Reduction of component count
  • AEC-Q101 qualified

Applications

  • Supply line switches
  • Battery charger switches
  • High-side switches for LEDs, drivers and backlights
  • Portable equipment

参数类型

型号 Package version Package name Size (mm)
PBLS4003V SOT666 SOT666 1.6 x 1.2 x 0.55

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PBLS4003V PBLS4003V,115
(934058634115)		 Obsolete SOT666
(SOT666) 		SOT666 REFLOW_BG-BD-1
SOT666_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PBLS4003V PBLS4003V,115 PBLS4003V rohs rhf rhf
品质及可靠性免责声明

Series

文档 (7)

文件名称 标题 类型 日期
PBLS4003Y_PBLS4003V 40 V PNP BISS loadswitch Data sheet 2009-02-18
SOT666 3D model for products with SOT666 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT666_mk plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Marcom graphics 2017-01-28
SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Package information 2022-06-01
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PBLS4003V PBLS4003V SPICE model SPICE model 2024-08-27

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PBLS4003V PBLS4003V SPICE model SPICE model 2024-08-27
SOT666 3D model for products with SOT666 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册