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Click here for more informationPBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.
Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
参数类型
型号 | Package version | Package name | Size (mm) | Product status | channel type (e) | Nr of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (PNP) (mV) | RCEsat@IC [max] (mΩ) | hFE [min] | fT [typ] (MHz) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PBSS5112PAP | SOT1118 | DFN2020-6 | 2 x 2 x 0.65 | End of life | PNP | 2 | 1040.0 | -120.0 | -1.0 | -480.0 | 440.0 | 190.0 | 100.0 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PBSS5112PAP | PBSS5112PAP,115 (934066894115) |
Discontinued / End-of-life | 2S |
DFN2020-6 (SOT1118) |
SOT1118 |
REFLOW_BG-BD-1
|
SOT1118_115 |
环境信息
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PBSS5112PAP | PBSS5112PAP,115 | PBSS5112PAP |
Series
文档 (9)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PBSS5112PAP | 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor | Data sheet | 2017-05-29 |
SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN2020-6_SOT1118_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
SOT1118 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
PBSS5112PAP_Nexperia_Product_Quality | PBSS5112PAP Nexperia Product Quality | Quality document | 2019-05-20 |
PBSS5112PAP_Nexperia_Product_Reliability | PBSS5112PAP Nexperia Product Reliability | Quality document | 2024-04-23 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PBSS5112PAP | PBSS5112PAP SPICE model | SPICE model | 2024-08-27 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PBSS5112PAP | PBSS5112PAP SPICE model | SPICE model | 2024-08-27 |
SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.