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Common-mode EMI filter for differential channels with integrated ESD protection
The devices are common-mode ElectroMagnetic Interference (EMI) filters with integrated ElectroStatic Discharge (ESD) protection for two and three differential channels. The devices are designed to provide low insertion loss for differential high-speed signals on each channel while unwanted common-mode signals are attenuated.
Each differential channel incorporates two signal lines that are coupled by integrated coils. Diodes provide protection to downstream components from ESD voltages up to ±15 kV on each signal line.
PCMF2DFN1 protects and filters two differential channels and is encapsulated in a DFN2520-9 (SOT1333-1/XSON9) plastic package.
PCMF3DFN1 protects and filters three differential channels and is encapsulated in a DFN4020-14 (SOT1334-1/XSON14) plastic package.
Features and benefits
- Two and three differential channels common-mode EMI filter with integrated ESD protection
- ESD protection up to ±15 kV contact discharge according to IEC 61000-4-2
- Superior common-mode suppression over a wide frequency range
- Maximum package height: 0.5 mm
Applications
- Smartphone, cellular and cordless phone
- Tablet PC and Mobile Internet Device (MID)
- MIPI D-PHY as used in Camera Serial Interface (CSI) and Display Serial Interface (DSI)
- High-Definition Multimedia Interface (HDMI)
- General-purpose EMI and Radio-Frequency Interference (RFI) filter and downstream ESD protection
文档 (2)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PCMF2DFN1_PCMF3DFN1 | Common-mode EMI filter for differential channels with integrated ESD protection | Data sheet | 2014-04-28 |
AN11303 | Integrated Common Mode Filter with ESD protection | Application note | 2014-05-08 |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.