双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PDTA123EE

PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details).

此产品已停产

Features and benefits

  • Built-in bias resistors

  • Simplified circuit design

  • Reduction of component count

  • Reduced pick and place costs.

  • AEC-Q101 qualified

Applications

  • General purpose switching and amplification

  • Inverter and interface circuits

  • Circuit driver.

参数类型

型号 Package version Package name Size (mm)
PDTA123EE SOT416 SC-75 1.6 x 0.75 x 0.9

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PDTA123EE PDTA123EE,115
(934058175115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PDTA123EE PDTA123EE,115 PDTA123EE rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
PDTA123E_SERIES PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Data sheet 2004-08-01
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTA123EE PDTA123EE SPICE model SPICE model 2024-08-27

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PDTA123EE PDTA123EE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册