双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMDT670UPE

20 V, 550 mA dual P-channel Trench MOSFET

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching

  • Trench MOSFET technology

  • ESD protection up to 2 kV

Applications

  • Relay driver

  • High-speed line driver

  • High-side loadswitch

  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) VESD (kV) (kV) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMDT670UPE SOT666 SOT666 Production P 2 -20 8 850 1500 2000 150 -0.55 0.18 0.76 0.33 -0.8 N 58 21 2011-09-15

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMDT670UPE PMDT670UPE,115
(934065734115)		 Active AG SOT666
(SOT666) 		SOT666 REFLOW_BG-BD-1
SOT666_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMDT670UPE PMDT670UPE,115 PMDT670UPE rohs rhf rhf
品质及可靠性免责声明

文档 (17)

文件名称 标题 类型 日期
PMDT670UPE 20 V, 550 mA P-channel Trench MOSFET Data sheet 2022-12-28
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT666 3D model for products with SOT666 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT666_mk plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Marcom graphics 2017-01-28
SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Package information 2022-06-01
SOT666_115 Reel pack for SMD, 7"; Q2/T3 product orientation Packing information 2020-06-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMDT670UPE_06_02_2012 PMDT670UPE.06_02_2012 Spice parameter SPICE model 2012-04-16
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMDT670UPE_06_02_2012 PMDT670UPE.06_02_2012 Spice parameter SPICE model 2012-04-16
SOT666 3D model for products with SOT666 package Design support 2019-01-22

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PMDT670UPE PMDT670UPE,115 934065734115 Active SOT666_115 4,000 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMDT670UPE PMDT670UPE,115 934065734115 SOT666 订单产品