双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMGD280UN

Dual N-channel TrenchMOS ultra low level FET

Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

不建议用在新设计中(NRND)。

Alternatives

Features and benefits

  • Low conduction losses due to low on-state resistance

  • Saves PCB space due to small footprint (40 % smaller than SOT23)

  • Suitable for high frequency applications due to fast switching characteristics

  • Suitable for low gate drive sources

Applications

  • Driver circuits

  • Switching in portable appliances

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMGD280UN
SOT363 TSSOP6 Not for design in N 1 20 8 340 430 150 0.87 0.18 0.89 0.4 0.7 N 45 11 2011-01-24

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMGD280UN
PMGD280UN,115
(934057726115)		 Active D2% SOT363
TSSOP6
(SOT363) 		SOT363 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT363_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMGD280UN
PMGD280UN,115 PMGD280UN rohs rhf rhf
品质及可靠性免责声明

文档 (21)

文件名称 标题 类型 日期
PMGD280UN Dual N-channel uTrenchmos (tm) ultra low level FET Data sheet 2004-02-09
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90032 Low temperature soldering, application study Application note 2022-02-22
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT363 3D model for products with SOT363 package Design support 2018-12-05
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP6_SOT363_mk plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body Marcom graphics 2017-01-28
SOT363 plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body Package information 2022-06-01
SOT363_115 TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation Packing information 2020-06-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMGD280UN_4_4_2011 PMGD280UN_4_4_2011 Spice parameter SPICE model 2011-08-22
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
MAR_SOT363 MAR_SOT363 Topmark Top marking 2013-06-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMGD280UN_4_4_2011 PMGD280UN_4_4_2011 Spice parameter SPICE model 2011-08-22
SOT363 3D model for products with SOT363 package Design support 2018-12-05

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PMGD280UN PMGD280UN,115 934057726115 Active SOT363_115 3,000 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMGD280UN PMGD280UN,115 934057726115 SOT363 订单产品