可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ | 934665873027 | PSC1065B1 | 订单产品 |
| PSC1065B1 | PSC1065B1Z | 934665873331 | PSC1065B1 | 订单产品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPSC1065B1
650 V, 10 A SiC Schottky diode in bare die
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM.
Features and benefits
Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure-of-merit (Qc x VF)
High IFSM capability
High power density
Reduced system costs
System miniaturization
Reduced EMI
Applications
Switch Mode Power Supply (SMPS)
AC-DC and DC-DC converter
Battery charging infrastructure
Server and telecom power supply
Uninterruptible Power Supply (UPS)
Photovoltaic inverters
参数类型
| 型号 | Package version | Package name | Size (mm) | VRRM [max] (V) | VF [max] (V) | @IF [max] @140 C (A) | IR [max] (µA) | @VR (V) | IFSM [max] (A) | Nr of functions | Configuration | Ptot [max] (W) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSC1065B1 | PSC1065B1 | Bare die | 1.45 x 1.45 x 0.11 | 650 | 1.8 | 10 | 60 | 650 | 440 | single | single | 65 | N |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ (934665873027) |
Active | PSC1065B1 |
Bar die (PSC1065B1) |
PSC1065B1_POV | 暂无信息 | |
| PSC1065B1Z (934665873331) |
Active | PSC1065B1 | 暂无信息 |
环境信息
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ | PSC1065B1 |
|
|
| PSC1065B1 | PSC1065B1Z | PSC1065B1 |
|
|
文档 (2)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSC1065B1 | 650 V, 10 A SiC Schottky diode in bare die | Data sheet | 2024-05-15 |
| PSC1065B1_POV | Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size | Package information | 2024-05-17 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ | 934665873027 | Active | 暂无信息 | 8,000 | 订单产品 |
| PSC1065B1 | PSC1065B1Z | 934665873331 | Active | 暂无信息 | 8,000 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSC1065B1
650 V, 10 A SiC Schottky diode in bare die
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
|---|