双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R0-25YLD

N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Avalanche rated, 100% tested at IAS = 190 A

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

  • Superfast switching with soft-recovery

  • Low spiking and ringing for low EMI designs

  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C

  • Optimised for 4.5 V gate drive

  • Low parasitic inductance and resistance

  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C

  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC:DC solutions for server and telecommunications

  • Secondary-side synchronous rectification in telecommunication applications

  • Voltage regulator modules (VRM)

  • Point-of-Load (POL) modules

  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

  • Brushed and brushless motor control

  • Power OR-ing

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R0-25YLD SOT669 LFPAK56; Power-SO8 Production N 1 25 1 1.43 175 100 8 33.2 71.8 160 36.7 1.75 N 5308 1979 2016-03-22

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R0-25YLD PSMN1R0-25YLDX
(934069908115)		 Active 1D025L SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R0-25YLD PSMN1R0-25YLDX PSMN1R0-25YLD rohs rhf
品质及可靠性免责声明

Series

文档 (21)

文件名称 标题 类型 日期
PSMN1R0-25YLD N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Data sheet 2020-06-23
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
Reliability_information_t9_sot669 Reliability information t9_sot669 Quality document 2022-10-18
T9_SOT669_PSMN1R0-25YLD_Nexperia_Quality_document Quality_document of T9_SOT669_PSMN1R0-25YLD Quality document 2022-10-18
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN1R0-25YLD PSMN1R0-25YLD SPICE model SPICE model 2016-04-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN1R0-25YLD_RC_Thermal_Model PSMN1R0-25YLD Thermal design model Thermal design 2021-01-18
PSMN1R0-25YLD PSMN1R0-25YLD Thermal model Thermal model 2016-04-13
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN1R0-25YLD PSMN1R0-25YLD SPICE model SPICE model 2016-04-13
PSMN1R0-25YLD_RC_Thermal_Model PSMN1R0-25YLD Thermal design model Thermal design 2021-01-18
PSMN1R0-25YLD PSMN1R0-25YLD Thermal model Thermal model 2016-04-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PSMN1R0-25YLD PSMN1R0-25YLDX 934069908115 Active SOT669_115 1,500 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN1R0-25YLD PSMN1R0-25YLDX 934069908115 SOT669 订单产品