双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R4-30YLD

N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

  • Superfast switching with soft-recovery; s-factor > 1

  • Low spiking and ringing for low EMI designs

  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C

  • Optimised for 4.5 V gate drive

  • Low parasitic inductance and resistance

  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C

  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC-to-DC solutions for server and telecommunications

  • Secondary-side synchronous rectification in telecommunication applications

  • Voltage regulator modules (VRM)

  • Point-of-Load (POL) modules

  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

  • Brushed and brushless motor control

  • Power OR-ing

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R4-30YLD SOT669 LFPAK56; Power-SO8 Production N 1 30 1.42 1.85 175 100 8.5 27.6 54.8 166 34 1.7 N 3840 1785 2013-10-10

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R4-30YLD PSMN1R4-30YLDX
(934068236115)		 Active 1D430L SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115
PSMN1R4-30YLD/2X
(934667511115)		 Active 1D430L SOT669_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R4-30YLD PSMN1R4-30YLDX PSMN1R4-30YLD rohs rhf
PSMN1R4-30YLD PSMN1R4-30YLD/2X PSMN1R4-30YLD rohs rhf
品质及可靠性免责声明

Series

文档 (22)

文件名称 标题 类型 日期
PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Data sheet 2018-03-29
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
Reliability_information_t9_sot669 Reliability information t9_sot669 Quality document 2022-10-18
T9_SOT669_PSMN1R4-30YLD_Nexperia_Quality_Reliability_document PSMN1R4-30YLD Quality document Quality document 2024-09-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN1R4-30YLD PSMN1R4-30YLD Spice model SPICE model 2014-06-11
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
CauerModel_PSMN1R4-30YLD Cauer model PSMN1R4-30YLD Thermal model 2024-07-21
FosterModel_PSMN1R4-30YLD Foster model PSMN1R4-30YLD Thermal model 2024-07-21
PSMN1R4-30YLD PSMN1R4-30YLD RC thermal model Thermal model 2024-07-21
PSMN1R4-30YLD_Cauer PSMN1R4-30YLD Cauer model Thermal model 2024-07-21
PSMN1R4-30YLD_Foster PSMN1R4-30YLD Foster model Thermal model 2024-07-21
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN1R4-30YLD PSMN1R4-30YLD Spice model SPICE model 2014-06-11
CauerModel_PSMN1R4-30YLD Cauer model PSMN1R4-30YLD Thermal model 2024-07-21
FosterModel_PSMN1R4-30YLD Foster model PSMN1R4-30YLD Thermal model 2024-07-21
PSMN1R4-30YLD PSMN1R4-30YLD RC thermal model Thermal model 2024-07-21
PSMN1R4-30YLD_Cauer PSMN1R4-30YLD Cauer model Thermal model 2024-07-21
PSMN1R4-30YLD_Foster PSMN1R4-30YLD Foster model Thermal model 2024-07-21
SOT669 3D model for products with SOT669 package Design support 2017-06-30

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PSMN1R4-30YLD PSMN1R4-30YLDX 934068236115 Active SOT669_115 1,500 订单产品
PSMN1R4-30YLD PSMN1R4-30YLD/2X 934667511115 Active SOT669_115 1,500 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN1R4-30YLD PSMN1R4-30YLDX 934068236115 SOT669 订单产品
PSMN1R4-30YLD PSMN1R4-30YLD/2X 934667511115 SOT669 订单产品