双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN6R5-30MLD

N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

此产品已停产

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Exposed leads for optimal visual solder inspection

Applications

  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN6R5-30MLD SOT1210 LFPAK33 End of life N 1 30 6.5 8.6 175 65 1.7 6.4 13.6 51 12.6 1.68 N 817 605 2013-10-02

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN6R5-30MLD PSMN6R5-30MLDX
(934068066115)		 Obsolete SOT1210
LFPAK33
(SOT1210) 		SOT1210 REFLOW_BG-BD-1
SOT1210_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN6R5-30MLD PSMN6R5-30MLDX PSMN6R5-30MLD rohs rhf
品质及可靠性免责声明

文档 (12)

文件名称 标题 类型 日期
PSMN6R5-30MLD N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Data sheet 2019-08-13
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90003 LFPAK MOSFET thermal design guide Application note 2023-08-22
SOT1210 3D model for products with SOT1210 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK33_SOT1210_mk Plastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch; 2.7 mm x 3.4 mm x 0.9 mm body Marcom graphics 2017-01-28
SOT1210 Plastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch Package information 2024-07-24
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

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模型

文件名称 标题 类型 日期
SOT1210 3D model for products with SOT1210 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册