双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PTVS12VZ1USKN

Transient voltage suppressor in DSN1608-2 for mobile applications

Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 (SOD963) package, designed for transient overvoltage protection.

此产品已停产

Features and benefits

  • Rated peak pulse current: IPPM = 65 A (8/20 µs pulse)
  • Rated peak pulse power: PPPM = 2100 W (8/20 µs pulse)
  • Dynamic resistance Rdyn = 0.1 Ω
  • Reverse current: IRM = 1 nA
  • Very low package height: 0.25 mm

Applications

  • Power supply protection
  • Industrial application
  • Power management

参数类型

型号 Package name
PTVS12VZ1USKN DSN1608-2

文档

No documents available

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册