可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
PUMD2 | PUMD2,115 | 934049950115 | SOT363 | 订单产品 |
PUMD2 | PUMD2,125 | 934049950125 | SOT363 | 订单产品 |
PUMD2 | PUMD2F | 934049950135 | SOT363 | 订单产品 |
PUMD2 | PUMD2,165 | 934049950165 | SOT363 | 订单产品 |
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Click here for more information50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ
NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PUMH1
PNP/PNP complement: PUMB1
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Low current peripheral driver
Controlling IC inputs
Replaces general-purpose transistors in digital applications
型号 | Package version | Package name | Size (mm) | IC [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) | Tj [max] (°C) | Automotive qualified |
---|---|---|---|---|---|---|---|---|---|---|---|
PUMD2 | SOT363 | TSSOP6 | 2.1 x 1.25 x 0.95 | 100 | 22 | 22 | NPN/PNP | 300 | 50 | 150 | N |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PUMD2 | PUMD2,115 (934049950115) |
Active | D%2 |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
PUMD2,125 (934049950125) |
Active | D%2 | SOT363_125 | ||||
PUMD2F (934049950135) |
Active | D%2 | SOT363_135 | ||||
PUMD2,165 (934049950165) |
Active | D%2 | SOT363_165 |
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PUMD2 | PUMD2,115 | PUMD2 | ||
PUMD2 | PUMD2,125 | PUMD2 | ||
PUMD2 | PUMD2F | PUMD2 | ||
PUMD2 | PUMD2,165 | PUMD2 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PUMD2 | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ | Data sheet | 2023-04-03 |
AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
SOT363_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
SOT363_135 | TSSOP6; Tape reel SMD; standard product orientation 12NC ending 135 | Packing information | 2020-04-27 |
SOT363_165 | TSSOP6 ; Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2024-01-24 |
PUMD2_Nexperia_Product_Reliability | PUMD2 Nexperia Product Reliability | Quality document | 2024-04-22 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PUMD2 | PUMD2 SPICE model | SPICE model | 2024-08-27 |
MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
PUMD2 | PUMD2,115 | 934049950115 | Active | SOT363_115 | 3,000 | 订单产品 |
PUMD2 | PUMD2,125 | 934049950125 | Active | SOT363_125 | 3,000 | 订单产品 |
PUMD2 | PUMD2F | 934049950135 | Active | SOT363_135 | 10,000 | 订单产品 |
PUMD2 | PUMD2,165 | 934049950165 | Active | SOT363_165 | 10,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.