双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

XC7WH126GD

Dual buffer/line driver; 3-state

The XC7WH126 is a high-speed Si-gate CMOS devices. This device provides a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFF-state.

此产品已停产

Alternatives

Features and benefits

  • Symmetrical output impedance

  • High noise immunity

  • Low power dissipation

  • Balanced propagation delays

  • CMOS input level

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40° C to +85° C and -40° C to +125° C

参数类型

型号 Package name
XC7WH126GD XSON8

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
XC7WH126GD XC7WH126GD,125
(935289949125)		 Withdrawn / End-of-life f26 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
XC7WH126GD XC7WH126GD,125 XC7WH126GD rohs rhf rhf
品质及可靠性免责声明

Series

文档 (4)

文件名称 标题 类型 日期
XC7WH126 Dual buffer/line driver; 3-state Data sheet 2024-01-03
xc7wh126 xc7wh126 IBIS model IBIS model 2013-04-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

文件名称 标题 类型 日期
xc7wh126 xc7wh126 IBIS model IBIS model 2013-04-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册