双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NXB0102

Dual supply translating transceiver; auto direction sensing; 3-state

The NXB0102 is a 2-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two 2-bit input-output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A) can be supplied at any voltage between 1.2 V and 3.6 V and VCC(B) can be supplied at any voltage between 1.65 V and 5.5 V, making the device suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins An and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B). A LOW level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

特性

  • Wide supply voltage range:

    • VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V

  • IOFF circuitry provides partial Power-down mode operation

  • Inputs accept voltages up to 5.5 V

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2500 V for A port

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 15000 V for B port

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1500 V

  • Latch-up performance exceeds 100 mA per JESD 78B Class II

  • Specified from −40 °C to +85 °C and −40 °C to +125 °C

参数类型

Type numberProduct statusVCC(A) (V)VCC(B) (V)Logic switching levelsOutput drive capability (mA)tpd (ns)Nr of bitsPower dissipation considerationsTamb (°C)Rth(j-a) (K/W)Ψth(j-top) (K/W)Rth(j-c) (K/W)Package nameCategory
NXB0102DCProduction1.2 - 3.61.65 - 5.5CMOS± 0.025.52low-40~12516910.676VSSOP8Bi-directional | AutoSense
NXB0102DC-Q100Production1.2 - 3.61.65 - 5.5CMOS± 0.025.52low-40~12516910.676VSSOP8Bi-directional | AutoSense
NXB0102GTProduction1.2 - 3.61.65 - 5.5CMOS± 0.025.52low-40~12516910.676XSON8Bi-directional | AutoSense
NXB0102UNProduction1.2 - 3.61.65 - 5.5CMOS± 0.025.52low-40~125---WLCSP8Bi-directional | AutoSense

封装

型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号，（订购码(12NC)）
NXB0102DC
VSSOP8
(SOT765-1) 		SOT765-1SOT765-1_125Activen2NXB0102DCH
( 9356 909 22125 )
NXB0102DC-Q100
VSSOP8
(SOT765-1) 		SOT765-1SOT765-1_125Activen2NXB0102DC-Q100H
( 9356 910 56125 )
NXB0102GT
XSON8
(SOT833-1) 		SOT833-1SOT833-1_115Activen2NXB0102GTX
( 9356 909 21115 )
NXB0102UN
WLCSP8
(SOT8023-1) 		SOT8023-1SOT8023-1_336Activen2NXB0102UNAZ
( 9356 911 07336 )

下表中的版本已停产。参见表 停产信息 了解更多信息。

型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号，（订购码(12NC)）
NXB0102UN
WLCSP8
(SOT8023-1) 		SOT8023-1SOT8023-1_084Withdrawn / End-of-lifen2NXB0102UNZ
( 9356 911 07084 )

停产信息

型号可订购的器件编号，（订购码(12NC)）最后一次购买日期最后一次交货日期替代产品状态备注
NXB0102UN935691107084

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符无铅转换日期
NXB0102DCNXB0102DCHNXB0102DC
NXB0102DC-Q100NXB0102DC-Q100HNXB0102DC-Q100
NXB0102GTNXB0102GTXNXB0102GT
NXB0102UNNXB0102UNAZNXB0102UN

下表中的版本已停产。参见表 停产信息 了解更多信息。

型号可订购的器件编号化学成分RoHSRHF指示符无铅转换日期
NXB0102UNNXB0102UNZNXB0102UN
品质及可靠性免责声明

文档 (6)

文件名称标题类型日期
NXB0102Dual supply translating transceiver; auto direction sensing; 3-stateData sheet2023-11-15
nxb0102NXB0102 IBIS modelIBIS model2020-02-26
MAR_SOT833MAR_SOT833 TopmarkTop marking2013-06-03
SOT833-1plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 1 mm x 1.95 mm x 0.5 mm bodyPackage information2022-06-03
SOT8023-1wafer level chip-scale package, 8 bumps; 0.75 x 1.55 x 0.60 mmPackage information2022-04-20
SOT765-1plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm bodyPackage information2022-06-03

支持

如果您需要设计/技术支持，请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
nxb0102NXB0102 IBIS modelIBIS model2020-02-26

订购、定价与供货

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方 经销商列表。