双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NXS0506

SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection

The NXS0506 is an SD 3.0-compatible bidirectional dual supply level translator with auto-direction control. It is designed to interface between a memory card operating at 1.7 V to 3.6 V signal levels and a host with a nominal supply voltage of 1.1 V to 1.95 V. The device supports SD 3.0: SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 High-Speed (50 MHz) and Default-Speed (25 MHz) modes. The device has a built-in EMI filter and robust ESD protection (IEC 61000-4-2, level 4).

特性

  • Supports up to 208 MHz clock rate

  • SD 3.0 specification-compatible voltage translation to support: SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes

  • 1.1 V to 1.95 V host side interface voltage support

  • Auto-direction sensing

  • Low power consumption

  • Integrated pull-up resistors: no external resistors required

  • Integrated EMI filters suppress higher harmonics of digital I/Os

  • Level shifting buffers keep ESD stress away from the host (zero-clamping concept)

  • 16-bumps WLCSP16 package; pitch 0.35 mm

  • 16-terminal XQFN16 package; pitch 0.4 mm

  • Latch-up performance exceeds 100 mA per JESD78 Class II.A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2 kV

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1 kV

    • IEC61000-4-2, level 4, contact discharge on all memory card-side pins exceeds 8 kV

    • IEC61000-4-2, level 4, air discharge on all memory card-side pins exceeds 15 kV

  • Specified from -40 °C to +85 °C

目标应用

  • Smartphone

  • Mobile handsets

  • Digital cameras

  • Tablet PCs

  • Laptop computers

  • SD, MMC or microSD card readers

参数类型

Type numberProduct statusVCC(A) (V)VCC(B) (V)Logic switching levelsOutput drive capability (mA)tpd (ns)Nr of bitsPower dissipation considerationsTamb (°C)Rth(j-a) (K/W)Ψth(j-top) (K/W)Rth(j-c) (K/W)Package nameCategory
NXS0506GUProduction1.1 - 1.951.7 - 3.6CMOS± 22.66low-40~85981.249XQFN16Application specific
NXS0506UPProduction1.1 - 1.951.7 - 3.6CMOS± 22.66low-40~85750.140.7WLCSP16Application specific

封装

型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号，（订购码(12NC)）
NXS0506GU
XQFN16
(SOT1161-1) 		SOT1161-1SOT1161-1_115Activem5NXS0506GUX
( 9356 915 16115 )
NXS0506UP
WLCSP16
(SOT8025-1) 		SOT8025-1SOT8025-1_336Activem5NXS0506UPAZ
( 9356 912 01336 )

下表中的版本已停产。参见表 停产信息 了解更多信息。

型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号，（订购码(12NC)）
NXS0506UP
WLCSP16
(SOT8025-1) 		SOT8025-1SOT8025-1_084Withdrawn / End-of-lifem5NXS0506UPZ
( 9356 912 01084 )

停产信息

型号可订购的器件编号，（订购码(12NC)）最后一次购买日期最后一次交货日期替代产品状态备注
NXS0506UP935691201084

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符无铅转换日期
NXS0506GUNXS0506GUXNXS0506GU
NXS0506UPNXS0506UPAZNXS0506UP

下表中的版本已停产。参见表 停产信息 了解更多信息。

型号可订购的器件编号化学成分RoHSRHF指示符无铅转换日期
NXS0506UPNXS0506UPZNXS0506UP
品质及可靠性免责声明

文档 (6)

文件名称标题类型日期
NXS0506SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protectionData sheet2024-02-06
AN90037NXS0506 SD-card voltage level translatorApplication note2022-09-22
nxs0506NXS0506 IBIS modelIBIS model2021-12-21
SD_card_NXS0506_leafletSD card NXS0506 LEafletLeaflet2024-06-28
SOT8025-1wafer level chip-scale package; 16 bumps; 1.455 mm x 1.455 mm x 0.43 mm bodPackage information2022-07-08
SOT1161-1plastic, leadless extermely thin quad flat package; 16 terminals; 0.4 mm pitch; 2.6 mm x 1.8 mm x 0.5 mm bodyPackage information2022-06-15

支持

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模型

文件名称标题类型日期
nxs0506NXS0506 IBIS modelIBIS model2021-12-21

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