双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NXT4556

SIM card interface level translator

The NXT4556 device is built for interfacing a SIM card with a single low-voltage host side interface. The NXT4556 has three level translators to convert the data, RST and CLK signals between a SIM card and a host microcontroller. A high speed level translation capable of supporting class-B, class-C SIM cards. VCC_SIM power-down initiates a shutdown sequence on SIM card pins in accordance with ISO-7816-3.

The NXT4556 is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface requirements.

特性

  • Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V

  • Host micro-controller operating voltage range: 1.08 V to 1.98 V

  • Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation

  • Incorporates shutdown feature for the SIM card signals according to ISO-7816-3

  • High Vdis(UVLO_AC) switching level, arranging quick shut down when VCC_SIM powers down

  • Integrated pull-up resistors; no external resistor required

  • Integrated EMI Filters suppresses higher harmonics of digital I/O's

  • Low current shutdown mode < 1 μA

  • Supports clock speed beyond 5 MHz clock

  • Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 exceeds 2 kV

    • CDM ANSI/ESDA/JEDEC JS-002 exceeds 1 kV

    • IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins exceeds 8 kV and 15 kV

  • Available in 9-pin wafer level chip-scale package (WLCSP); 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm body; 0.35 mm pitch

目标应用

  • NXT4556 can be used with a range of SIM card attached devices including:

    • Mobile and personal phones

    • Wireless modems

    • SIM card terminals

参数类型

Type numberProduct statusVCC(A) (V)VCC(B) (V)Logic switching levelsOutput drive capability (mA)tpd (ns)Nr of bitsPower dissipation considerationsTamb (°C)Rth(j-a) (K/W)Ψth(j-top) (K/W)Rth(j-c) (K/W)Package nameCategory
NXT4556UPProduction1.08 - 1.981.62 - 3.3CMOS± 1203low-40~851060.15-WLCSP9Application specific

(-) dash denotes: "Parameter value not specified for this product"

封装

型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号，（订购码(12NC)）
NXT4556UP
WLCSP9
(SOT8027-1) 		SOT8027-1SOT8027-1_336Activez6NXT4556UPAZ
( 9356 911 90336 )

下表中的版本已停产。参见表 停产信息 了解更多信息。

型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号，（订购码(12NC)）
NXT4556UP
WLCSP9
(SOT8027-1) 		SOT8027-1SOT8027-1_084Discontinued / End-of-lifez6NXT4556UPZ
( 9356 911 90084 )

停产信息

型号可订购的器件编号，（订购码(12NC)）最后一次购买日期最后一次交货日期替代产品状态备注
NXT4556UP935691190084

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符无铅转换日期
NXT4556UPNXT4556UPAZNXT4556UP

下表中的版本已停产。参见表 停产信息 了解更多信息。

型号可订购的器件编号化学成分RoHSRHF指示符无铅转换日期
NXT4556UPNXT4556UPZNXT4556UP
品质及可靠性免责声明

文档 (3)

文件名称标题类型日期
NXT4556SIM card interface level translatorData sheet2022-06-15
nxt4556NXT4556 IBIS modelIBIS model2021-08-31
SOT8027-1wafer level chip-scale package; 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm bodyPackage information2022-09-27

支持

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模型

文件名称标题类型日期
nxt4556NXT4556 IBIS modelIBIS model2021-08-31

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