双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

LFPAK56D

LFPAK56D

General description

关键应用

Applications

  • Engine management

  • ABS/ESP systems

  • Transmission control

  • Body control

  • LED lighting

Parametric search

LFPAK56D
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参数搜索不可用。

Products

Automotive qualified products (AEC-Q100/Q101)

型号 描述 状态 快速访问
BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET Production
BUK7K134-100E Dual N-channel 100 V, 121 mΩ standard level MOSFET Production
BUK7K25-40E Dual N-channel 40 V, 25 mΩ standard level MOSFET Production
BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET Production
BUK7K23-80E Dual N-channel 80 V, 23 mΩ standard level MOSFET Production
BUK7K35-60E Dual N-channel 60 V, 30 mΩ standard level MOSFET Production
BUK7K5R6-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET Production
BUK9K13-60E Dual N-channel 60 V, 12.5 mΩ logic level MOSFET Production
BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET Production
BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K22-80E Dual N-channel 80 V, 22 mΩ logic level MOSFET Production
BUK9K20-80E Dual N-channel 80 V, 20 mΩ logic level MOSFET Production
BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET Production
BUK9K52-60RA Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET Production
BUK9K5R6-30E Dual N-channel 30 V, 5.8 mΩ logic level MOSFET Production
BUK9K89-100E Dual N-channel TrenchMOS logic level FET Production
BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Development
BUK9K13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D Development
BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Development
BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET Production
BUK7K13-60E Dual N-channel 60 V, 10 mΩ standard level MOSFET Production
BUK7K89-100E Dual N-channel 100 V, 82.5 mΩ standard level MOSFET Production
BUK7K8R7-40E Dual N-channel 40 V, 8.5 mΩ standard level MOSFET Production
BUK7K17-80E Dual N-channel 80 V, 17 mΩ standard level MOSFET Production
BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET Production
BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET Production
BUK7K45-100E Dual N-channel 100 V, 37.6 mΩ standard level MOSFET Production
BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET Production
BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET Production
BUK9K18-40E Dual N-channel 40 V, 19.5 mΩ logic level MOSFET Production
BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET Production
BUK7K5R1-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK7K32-100E Dual N-channel 100 V, 27.5 mΩ standard level MOSFET Production
BUK7K15-80E Dual N-channel 80 V, 15 mΩ standard level MOSFET Production
BUK9K5R1-30E Dual N-channel 30 V, 5.3 mΩ logic level MOSFET Production
BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET Production
BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET Production
BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET Production
BUK9K25-40E Dual N-channel 40 V, 29 mΩ logic level MOSFET Production
BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET Production
BUK9K45-100E Dual N-channel TrenchMOS logic level FET Production
BUK9K52-60E Dual N-channel 60 V, 55 mΩ logic level MOSFET Production
BUK9K29-100E Dual N-channel TrenchMOS logic level FET Production

MOSFETs

型号 描述 状态 快速访问
BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET Production
BUK7K134-100E Dual N-channel 100 V, 121 mΩ standard level MOSFET Production
BUK7K25-40E Dual N-channel 40 V, 25 mΩ standard level MOSFET Production
BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET Production
BUK7K23-80E Dual N-channel 80 V, 23 mΩ standard level MOSFET Production
BUK7K35-60E Dual N-channel 60 V, 30 mΩ standard level MOSFET Production
BUK7K5R6-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET Production
BUK9K13-60E Dual N-channel 60 V, 12.5 mΩ logic level MOSFET Production
BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET Production
BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K22-80E Dual N-channel 80 V, 22 mΩ logic level MOSFET Production
BUK9K20-80E Dual N-channel 80 V, 20 mΩ logic level MOSFET Production
BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET Production
BUK9K52-60RA Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET Production
BUK9K5R6-30E Dual N-channel 30 V, 5.8 mΩ logic level MOSFET Production
BUK9K89-100E Dual N-channel TrenchMOS logic level FET Production
BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Development
BUK9K13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D Development
BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Development
BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET Production
BUK7K13-60E Dual N-channel 60 V, 10 mΩ standard level MOSFET Production
BUK7K89-100E Dual N-channel 100 V, 82.5 mΩ standard level MOSFET Production
BUK7K8R7-40E Dual N-channel 40 V, 8.5 mΩ standard level MOSFET Production
BUK7K17-80E Dual N-channel 80 V, 17 mΩ standard level MOSFET Production
BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET Production
BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET Production
BUK7K45-100E Dual N-channel 100 V, 37.6 mΩ standard level MOSFET Production
BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET Production
BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET Production
BUK9K18-40E Dual N-channel 40 V, 19.5 mΩ logic level MOSFET Production
BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET Production
BUK7K5R1-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK7K32-100E Dual N-channel 100 V, 27.5 mΩ standard level MOSFET Production
BUK7K15-80E Dual N-channel 80 V, 15 mΩ standard level MOSFET Production
BUK9K5R1-30E Dual N-channel 30 V, 5.3 mΩ logic level MOSFET Production
BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET Production
BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET Production
BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET Production
BUK9K25-40E Dual N-channel 40 V, 29 mΩ logic level MOSFET Production
BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET Production
BUK9K45-100E Dual N-channel TrenchMOS logic level FET Production
BUK9K52-60E Dual N-channel 60 V, 55 mΩ logic level MOSFET Production
BUK9K29-100E Dual N-channel TrenchMOS logic level FET Production

Documentation

文件名称 标题 类型 日期
LFPAK56D_SOT669_mk.png plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT1205.step 3D model for products with SOT1205 package Design support 2017-06-30
nexperia_document_leaflet_LFPAK56D_factsheet_LR_201708.pdf LFPAK56D the ultimate dual MOSFET Leaflet 2017-08-17
Nexperia_package_poster.pdf Nexperia package poster Leaflet 2020-05-15
vp_LFPAK56D.zip LFPAK56D Value proposition 2022-08-03
AN90003.pdf LFPAK MOSFET thermal design guide Application note 2023-08-22

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