双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSC1065B1

PSC1065B1

Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM.

外形图

封装版本 封装名称 封装说明 参考 发行日期
PSC1065B1_POV PSC1065B1 Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size 2024-01-18

相关文档

文件名称 标题 类型 日期
PSC1065B1_POV Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size Package information 2024-05-17

采用此封装的产品

Diodes

型号 描述 快速访问
PSC1065B1 650 V, 10 A SiC Schottky diode in bare die