可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74AUP1G08GW | 74AUP1G08GW,125 | 935279019125 | SOT353-1 | 订单产品 |
74AUP1G08GW | 74AUP1G08GW/C7H | 935691929125 | SOT353-1 | 订单产品 |
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Click here for more informationLow-power 2-input AND gate
The 74AUP1G08 is a single 2-input AND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Low static power consumption; ICC = 0.9 μA (maximum)
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型号 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|
74AUP1G08GW | 0.8 - 3.6 | CMOS | ± 1.9 | 8.2 | 70 | 1 | ultra low | -40~125 | 309 | 79.2 | 179 | TSSOP5 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74AUP1G08GW | 74AUP1G08GW,125 (935279019125) |
Active | pE |
TSSOP5 (SOT353-1) |
SOT353-1 |
WAVE_BG-BD-1
|
SOT353-1_125 |
74AUP1G08GW/C7H (935691929125) |
Active | pE | SOT353-1_125 |
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
74AUP1G08GW | 74AUP1G08GW,125 | 74AUP1G08GW | ||
74AUP1G08GW | 74AUP1G08GW/C7H | 74AUP1G08GW |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AUP1G08 | Low-power 2-input AND gate | Data sheet | 2024-08-30 |
AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT353-1 | 3D model for products with SOT353-1 package | Design support | 2019-09-23 |
aup1g08 | 74AUP1G08 IBIS model | IBIS model | 2014-12-14 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP5_SOT353-1_mk | plastic, thin shrink small outline package; 5 leads; 0.65 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2018-07-25 |
SOT353-1 | plastic thin shrink small outline package; 5 leads; body width 1.25 mm | Package information | 2022-11-15 |
SOT353-1_125 | TSSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2023-02-21 |
SOT353-1_125 | TSSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2023-02-21 |
74AUP1G08GW_Nexperia_Product_Reliability | 74AUP1G08GW Nexperia Product Reliability | Quality document | 2024-06-16 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74AUP1G08GW | 74AUP1G08GW,125 | 935279019125 | Active | SOT353-1_125 | 3,000 | 订单产品 |
74AUP1G08GW | 74AUP1G08GW/C7H | 935691929125 | Active | SOT353-1_125 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.