双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

用于直流电机控制的ASFET

效率、功率密度、最大电流和Qrr 

从无人机、家用电器和电动工具到高尔夫球车和叉车，功能强大的PWM驱动无刷直流电机已经成为标配。在如此广泛的产品中，不同的应用需要不同的优化。通常，小型电池驱动的应用需要在功率、尺寸和噪音方面非常高效。此外，对于并联使用多个MOSFET的大型多节移动系统而言，平衡均流能力可能是关键。凭借LFPAK业界领先的电路板级可靠性，Nexperia可轻松处理任何振动/冲击，为您提供保持电机运转的动力。

参数搜索

ASFETs for Motor Control
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产品

型号 描述 状态 快速访问
PSMN013-40VLD Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN0R9-30ULD N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40ULD N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN1R7-40YLD N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN2R0-55YLH N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN2R3-100SSJ N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 Development
PSMN2R4-30YLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET Production
PSMN4R1-60YL N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 Production
PSMN4R2-40VSH Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 mΩ standard level FET Production
PSMN6R9-100YSF NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package EndOfLife
PSMN8R7-100YSF NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package EndOfLife
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 Production
Visit our documentation center for all documentation

Leaflet (2)
文件名称 标题 类型 日期
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf LFPAK88 将功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022.pdf LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)
文件名称 标题 类型 日期
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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