双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

应用专用MOSFET

根据您的需要优化

随着设计人员打破应用性能界限，了解如何在应用中使用MOSFET至关重要。过去，具有给定的品质因数(FOM)的标准功率开关基本上适用于任何应用。但是，为了满足特定的应用要求或功能，越来越需要优化MOSFET参数组来更好地匹配这些要求。例如，应用可能要求软启动、扩展的安全工作区域、可靠的线性模式性能或增强的保护。在Nexperia，我们将久经验证的MOSFET专业知识和广泛的应用认知相结合，打造了一系列更丰富的应用专用MOSFET。

产品

型号 描述 状态 快速访问
BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K52-60RA Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9M20-60EL Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
BUK9M31-60EL Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
BUK9M67-60EL Single N-channel 60 V, 44 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK9Y13-60EL Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
BUK9Y22-60EL Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
BUK9Y7R0-60EL Single N-channel 60 V, 4.5 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
BUK9Y8R8-60EL Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN013-40VLD Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN040-100MSE N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications Production
PSMN047-100NSE N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement Production
PSMN071-100NSE N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement Production
PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications Production
PSMN0R9-30ULD N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-100ASF NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R0-100CSF NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R0-30YLE N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40ULD N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-80CSE N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R1-30YLE N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R1-80ASF NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R1-80CSF NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN1R2-80ASE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R2-80CSE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Qualification
PSMN1R3-100ASF NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R4-100ASE N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R4-100CSE N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R4-100CSF NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK Production
PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN1R5-60YSN N-channel 60 V, 1.5 mOhm, ASFET for Battery System in LFPAK56E Qualification
PSMN1R6-25YLE N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN1R7-40YLD N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Production
PSMN2R0-55YLH N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN2R1-30YLE N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R3-100SSJ N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 Development
PSMN2R4-30YLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R5-80SSE N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R9-100SSE N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN3R4-30BLE N-channel 30 V, 3.4 mΩ logic level MOSFET in D2PAK Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN3R9-100YSF NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Production
PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET Production
PSMN4R1-60YL N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 Production
PSMN4R2-40VSH Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN4R2-80YSE N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package EndOfLife
PSMN4R8-100YSE N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 mΩ standard level FET Production
PSMN6R9-100YSF NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package EndOfLife
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package EndOfLife
PSMN8R7-100YSF NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package EndOfLife
PSMN8R9-100BSE N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR56-25YLE N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR67-30YLE N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR70-40YSN N-channel 40 V, 0.81 mOhm, ASFET for Battery System in LFPAK56E Production
PSMNR82-30YLE N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR89-25YLE N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR90-40YSN N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E Production
PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 Production
PSMNR90-80ASE N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMNR90-80ASF NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMNR90-80CSF NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMNR98-25YLE N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
Visit our documentation center for all documentation

Marcom graphics (1)
文件名称 标题 类型 日期
RS1087_LFPAK56-UL2595-BottomTop-v1.png RS1087_LFPAK56-UL2595-Bottom+Top-v1 Marcom graphics 2020-09-30

Selection guide (1)
文件名称 标题 类型 日期
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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