双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

650 V e-mode GaN FETs

Optimized balance of voltage and power

Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.

参数搜索

650 V e-mode GaN FETs
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产品

型号 描述 状态 快速访问
GAN080-650EBE 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN140-650EBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN140-650FBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GAN190-650EBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN190-650FBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GANE140-700BBA 700 V, 140 mOhm Gallium Nitride (GaN) FET in DPAK package Development
GANE190-700BBA 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package Development
GANE240-700BBA 700 V, 240 mOhm Gallium Nitride (GaN) FET in DPAK package Development
GANE350-650FBA 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Development
GANE350-700BBA 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package Development
GANE600-650FBA 650 V, 600 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Development
Visit our documentation center for all documentation

Application note (2)
文件名称 标题 类型 日期
AN90041.pdf Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs Application note 2023-05-09
AN90021.pdf Power GaN technology: the need for efficient power conversion Application note 2020-08-14

Leaflet (2)
文件名称 标题 类型 日期
nexperia_document_leaflet_GaNFETs_2024-CHN.pdf Power GaN FETs Chinese Leaflet 2024-07-31
nexperia_document_leaflet_GaNFETs_2024.pdf Power GaN FETs Leaflet 2024-07-24

Marcom graphics (1)
文件名称 标题 类型 日期
DFN8080-8_SOT8074-1-combi_mk.png plastic thermal enhanced small outline package; no leads; 8 terminals; body: 8 x 8 x 0.9 mm Marcom graphics 2023-04-20

User manual (1)
文件名称 标题 类型 日期
UM90045.pdf NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide User manual 2024-09-06

White paper (3)
文件名称 标题 类型 日期
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23

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