产品
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| GANB012-040CBA | 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) | Development | |
| GANB1R2-040QBA | 40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Development | |
| GANB4R8-040CBA | 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) | Production | |
| GANB8R0-040CBA | 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) | Development |
Visit our documentation center for all documentation
Leaflet (2) |
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|---|---|---|---|
| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_document_leaflet_GaNFETs_2024-CHN.pdf | Power GaN FETs Chinese | Leaflet | 2024-07-31 |
| nexperia_document_leaflet_GaNFETs_2024.pdf | Power GaN FETs | Leaflet | 2024-07-24 |
Marcom graphics (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| RS5824_WLCSP22-A-Combi_small.png | SOT8086 Marcom image | Marcom graphics | 2024-06-11 |
Outline 3d (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| wlcsp22_sot8086_3d.png | SOT8086-1; WLCSP22 | Outline 3d | 2024-05-30 |