双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC1G53GD

2-channel analog multiplexer/demultiplexer

The 74LVC1G53 is a single-pole double-throw analog switch with a digital select input (S), two independent inputs/outputs (Y0 and Y1), a common input/output (Z) and a digital enable input (E). When E is HIGH, the switch is turned off. Control inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at control inputs makes the circuit tolerant of slower input rise and fall times.

此产品已停产

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • Very low ON resistance:

    • 7.5 Ω (typical) at VCC = 2.7 V

    • 6.5 Ω (typical) at VCC = 3.3 V

    • 6 Ω (typical) at VCC = 5 V

  • Switch current capability of 32 mA

  • High noise immunity

  • CMOS low power consumption

  • TTL interface compatibility at 3.3 V

  • Latch-up performance meets requirements of JESD 78 Class I

  • Control inputs accept voltages up to 5 V

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

文档 (4)

文件名称 标题 类型 日期
74LVC1G53 2-channel analog multiplexer/demultiplexer Data sheet 2024-04-30
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
lvc1g53 74LVC1G53 IBIS model IBIS model 2015-02-19

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模型

文件名称 标题 类型 日期
lvc1g53 74LVC1G53 IBIS model IBIS model 2015-02-19

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.