可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74LVCH1T45GW | 74LVCH1T45GW,125 | 935284754125 | SOT363-2 | 订单产品 |
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Click here for more informationDual supply translating transceiver; 3-state
The 74LVC1T45; 74LVCH1T45 are single bit, dual supply transceivers with 3-state outputs that enable bidirectional level translation. They feature two 1-bit input-output ports (A and B), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 1.2 V and 5.5 V making the device suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins A and DIR are referenced to VCC(A) and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B and a LOW on DIR allows transmission from B to A.
The devices are fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both A port and B port are in the high-impedance OFF-state.
Active bus hold circuitry in the 74LVCH1T45 holds unused or floating data inputs at a valid logic level.
Wide supply voltage range:
VCC(A): 1.2 V to 5.5 V
VCC(B): 1.2 V to 5.5 V
High noise immunity
Maximum data rates:
420 Mbps (3.3 V to 5.0 V translation)
210 Mbps (translate to 3.3 V))
140 Mbps (translate to 2.5 V)
75 Mbps (translate to 1.8 V)
60 Mbps (translate to 1.5 V)
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
±24 mA output drive (VCC = 3.0 V)
Inputs accept voltages up to 5.5 V
Low power consumption: 16 μA maximum ICC
IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standards:
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 4000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型号 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name | Category |
---|---|---|---|---|---|---|---|---|---|---|
74LVCH1T45GW | 1.2 - 5.5 | 1.2 - 5.5 | CMOS/LVTTL | ± 24 | 2.5 | 1 | low | -40~125 | TSSOP6 | Bi-directional | Direction controlled |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74LVCH1T45GW | 74LVCH1T45GW,125 (935284754125) |
Active | X5 |
TSSOP6 (SOT363-2) |
SOT363-2 | SOT363-2_125 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74LVC_LVCH1T45 | Dual supply translating transceiver; 3-state | Data sheet | 2023-08-04 |
AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
AN11009 | Pin FMEA for LVC family | Application note | 2019-01-09 |
Nexperia_document_guide_Logic_translators | Nexperia Logic Translators | Brochure | 2021-04-12 |
SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
lvch1t45 | lvch1t45 IBIS model | IBIS model | 2013-04-09 |
SOT363-2 | plastic thin shrink small outline package; 6 leads; body width 1.25 mm | Package information | 2022-11-21 |
SOT363-2_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2022-11-04 |
74LVCH1T45GW_Nexperia_Product_Reliability | 74LVCH1T45GW Nexperia Product Reliability | Quality document | 2024-06-16 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74LVCH1T45GW | 74LVCH1T45GW,125 | 935284754125 | Active | SOT363-2_125 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.