双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

AC EV wallbox

Car electrification is well underway and numerous countries have ambitious plans to rule out new petrol and diesel in the near future. One of the critical challenges in making electric vehicles more common, is the availability of accessible charging points. Standard AC wallboxes offering 3.7–22 kW of AC charging are currently the most common residential option, with bidirectional technology (allowing electricity to flow into and out of EVs) rapidly maturing. This will enable cars to become mobile storage platforms and fully integrated into smart grid infrastructures.

Block diagram

Highlighted components are Nexperia focus products

Design considerations

  • Most common AC wallboxes are rated 420 V which can be covered with 650 V GAN FETs
  • Need to be able to provide robust and reliable system performance, with high SOA and avalanche capabilties
  • Nexperia GaN FETs are easy to drive, enabling high power density with standard, inexpensive MOSFET drviers
  • CCPAK technology delivers compact design with high efficiency and reliability
  • Increasing interest in bare die desings 

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

H-bridge motor controller design using Nexperia discrete semiconductors and logic ICs

The H-bridge circuit in this Technical Note is a full bridge DC-to-DC converter allowing operation of a brushed DC motor (48 V max, 12 V min, 5 A max). All electronic functions are designed with Nexperia discrete and logic IC components (low cost, no microcontroller or software needed). Read more >>